Transformer-isolated gate drive design for SiC JFET phase-leg module

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 1728-1733

  Wang, Ruxi ^a   Danilovic, Milisav ^a   Boroyevich, Dushan ^a   Chen, Zheng ^a   Kaushik, Rajashekara ^b  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b ROLLS ROYCE CORPORATION   (United States)

Author keywords

High Temperature Application; Silicon Carbide; Transformer Isolated Gate drive

Indexed keywords

FAST SWITCHING; GATE DRIVE CIRCUITS; GATE DRIVERS; GATE DRIVES; HIGH FREQUENCY HF; HIGH TEMPERATURE; INDUCTIVE LOADS; SIC DEVICES;

ELECTRONIC EQUIPMENT TESTING; ENERGY CONVERSION; HIGH TEMPERATURE APPLICATIONS; SILICON CARBIDE; TOPOLOGY;

ELECTRIC TRANSFORMER TESTING;

EID: 81855161447     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6063991     Document Type: Conference Paper

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