Semiconducting divalent metal oxides as blocking layer material for SnO2-based dye-sensitized solar cells

Journal of Physical Chemistry C

Volumn 115, Issue 46, 2011, Pages 23120-23125

  Kim, Min Hye ^a   Kwon, Young Uk ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC CRYSTALS; BASIC PROPERTIES; BLOCKING LAYERS; COATING MATERIAL; D-D TRANSITIONS; DIVALENT METALS; DYE-SENSITIZED SOLAR CELL; DYE-SENSITIZED SOLAR CELLS; FLAT BAND; HIGH RESISTANCE; METAL OXIDES; NARROW BAND GAP; POSITIVE EFFECTS; QUANTUM SIZE EFFECTS; RECOMBINATION REACTIONS; SEMICONDUCTING MATERIALS; SOLAR CELL EFFICIENCIES; WELL-DISPERSED; ZNO;

ANISOTROPY; CADMIUM COMPOUNDS; COATINGS; LEAD OXIDE; METALS; NANOPARTICLES; PHOTOELECTROCHEMICAL CELLS; PLATING; SOLAR CELLS; ZINC OXIDE;

NANOSTRUCTURED MATERIALS;

EID: 81755184019     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2069978     Document Type: Article

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