Oxygen rich p-type ZnO thin films using wet chemical route with enhanced carrier concentration by temperature-dependent tuning of acceptor defects

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Ilyas, Usman ^a,b   Rawat, R S ^a   Tan, T L ^a   Lee, P ^a   Chen, R ^c   Sun, H D ^c   Fengji, Li ^d   Zhang, Sam ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Pakistan)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLINITIES; DEEP-LEVEL EMISSION PEAKS; ELEVATED TEMPERATURE; HALL PROBE MEASUREMENTS; INTERSTITIALS; LATTICE SITES; P TYPE ZNO; P TYPE ZNO THIN FILM; P-TYPE CONDUCTIVITY; POST DEPOSITION ANNEALING; RELATIVE CONCENTRATION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SILICON SUBSTRATES; TEMPERATURE DEPENDENT; WET CHEMICAL ROUTE; WET-CHEMICAL METHOD; ZINC ACETATE DIHYDRATE; ZNO POWDER; ZNO THIN FILM;

ANNEALING; CONCENTRATION (PROCESS); DEPOSITION; HOLE CONCENTRATION; LATTICE CONSTANTS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; POTASSIUM; POTASSIUM HYDROXIDE; PULSED LASER DEPOSITION; PULSED LASERS; SINTERING; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC COMPOUNDS; ZINC OXIDE;

VAPOR DEPOSITION;

EID: 81355163360     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3660284     Document Type: Article

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