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Volumn , Issue , 2011, Pages 8-10

High-efficiency 25Gb/s CMOS ring modulator with integrated thermal tuning

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT MODELING; CMOS PROCESSS; EXTINCTION RATIOS; THERMAL TUNING;

EID: 81355136245     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2011.6053698     Document Type: Conference Paper
Times cited : (17)

References (14)
  • 2
    • 67449128189 scopus 로고    scopus 로고
    • Device requirements for optical interconnects to Silicon chips
    • D. A. B. Miller, "Device requirements for optical interconnects to Silicon chips," Proceedings of the IEEE, 97 (7), 1166-1185, 2009.
    • (2009) Proceedings of the IEEE , vol.97 , Issue.7 , pp. 1166-1185
    • Miller, D.A.B.1
  • 3
    • 51249098537 scopus 로고    scopus 로고
    • High speed carrier injection 18Gb/s silicon micro-ring electro-optic modulator
    • S. Manipatruni, Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, "High speed carrier injection 18Gb/s silicon micro-ring electro-optic modulator," LEOS, 537-538, 2007.
    • (2007) LEOS , pp. 537-538
    • Manipatruni, S.1    Xu, Q.2    Schmidt, B.3    Shakya, J.4    Lipson, M.5
  • 7
    • 79959977932 scopus 로고    scopus 로고
    • Over 40 GHz traveling-wave electroabsorption modulator based on hybrid silicon platform
    • OWQ3
    • Y. Tang, H. Chen, J. Peters, U. Westergren, and J. Bowers, "Over 40 GHz traveling-wave electroabsorption modulator based on hybrid silicon platform," OFC, OWQ3, 2011.
    • (2011) OFC
    • Tang, Y.1    Chen, H.2    Peters, J.3    Westergren, U.4    Bowers, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.