Development of deep reactive ion etching and Cu electroplating of tapered via for 3D integration

ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging

Volumn , Issue , 2011, Pages 65-67

  Chen, Xiao ^a,b   Tang, Jiajie ^a,b   Xu, Gaowei ^a   Luo, Le ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

BOSCH process; Deep reative ion etch; Tapered silicon via; TSV

Indexed keywords

3-D INTEGRATION; 3D SYSTEMS; BOSCH PROCESS; CU ELECTROPLATING; DEEP REACTIVE ION ETCH; DEEP REACTIVE ION ETCHING; DEEP REATIVE ION ETCH; DRILLING METHODS; ELECTROPLATING PROCESS; ENABLING TECHNOLOGIES; ETCHING STEP; EXPERIMENTAL METHODOLOGY; HIGH DENSITY; MEMS PACKAGING; PROFILE DEVELOPMENT; TAPER ANGLES; TAPERED SILICON VIA; THREE DIMENSIONAL INTEGRATION; THROUGH SILICON VIAS; THROUGH-SILICON-VIA; TSV; VIA FILLING; VOID-FREE;

ELECTRONICS PACKAGING; INTEGRATION; IONS; PACKAGING; TECHNOLOGY; THREE DIMENSIONAL;

REACTIVE ION ETCHING;

EID: 81355132466     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEPT.2011.6066791     Document Type: Conference Paper

References (6)

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