Diffusion at interfaces of micro thermoelectric devices

Current Applied Physics

Volumn 11, Issue 5 SUPPL., 2011, Pages

  Bae, Nam Ho ^a,c   Han, Seungwoo ^b   Lee, Kwang Eun ^b   Kim, Byeongil ^a   Kim, Seon Tai ^c  

^a National Nano Fab Center (NNFC)   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

Bismuth antimony telluride; Bismuth telluride; Diffusion; Micro thermoelectric device; RF sputtering; Thin films

Indexed keywords

ANNEAL TEMPERATURES; BISMUTH ANTIMONY TELLURIDE; BISMUTH TELLURIDE; BONDING LAYERS; CROSS SECTION; DIFFUSION AT INTERFACES; DIFFUSION CHARACTERISTICS; DIFFUSION PHENOMENA; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FIELD-EMISSION TRANSMISSION; METALLIC ELECTRODES; MICRO THERMOELECTRIC DEVICE; P-TYPE; RF SPUTTERING; RF-MAGNETRON SPUTTERING; SOLDER MATERIAL; THERMOELECTRIC DEVICES; THERMOELECTRIC MATERIAL; THERMOELECTRIC THIN FILMS;

BISMUTH; DIFFUSION; ELECTRODES; ELECTRON EMISSION; EQUIPMENT; FIELD EMISSION; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; THERMOELECTRICITY; THIN FILMS; TIN; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSION BARRIERS;

EID: 81155134100     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.05.036     Document Type: Conference Paper

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