Effect of light intensity and temperature on the performance of GaN-based p-i-n solar cells

2011 International Conference on Electrical and Control Engineering, ICECE 2011 - Proceedings

Volumn , Issue , 2011, Pages 1535-1537

  Cai, Xiaomei ^a   Zeng, Shengwei ^a   Li, Xin ^a   Zhang, Jiangyong ^a   Lin, Shuo ^a   Lin, Ankai ^a   Zhang, Baoping ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

illumination dependence; InGaN; solar cell; temperature dependence

Indexed keywords

FILLING FACTOR; ILLUMINATION DEPENDENCE; INFORMATION CONCERNING; INGAN; LIGHT INTENSITY; RELATIVE EFFICIENCY; SERIES RESISTANCES; TEMPERATURE DEPENDENCE;

GALLIUM NITRIDE; OPEN CIRCUIT VOLTAGE;

GALLIUM ALLOYS;

EID: 80955168099     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECENG.2011.6058463     Document Type: Conference Paper

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