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Volumn 21, Issue 45, 2011, Pages 18289-18294

Yb3+ doped LaSi3N5 and YSi 3N5 with low energy charge transfer for near-infrared light-emitting diode and solar cell application

(4) Ten Kate, Otmar M a,b Hintzen, Hubertus T b Dorenbos, Pieter a Van Der Kolk, Erik a

a DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

b EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CT BANDS; EMISSION INTENSITY; ENERGY LEVEL DIAGRAMS; GLOVEBOXES; HIGH TEMPERATURE FURNACES; INFRARED LIGHT-EMITTING DIODES; LOW ENERGIES; LUMINESCENCE PROPERTIES; NEAR INFRARED; SOLAR-CELL APPLICATIONS; SOLID-STATE SYNTHESIS; SPECTRAL CONVERSION; TRIVALENT ION;

CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRON MOBILITY; ION EXCHANGE; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; NANOSTRUCTURED MATERIALS; YTTERBIUM;

SOLAR ENERGY;

EID: 80755159267 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm13330f Document Type: Article

Times cited : (37)

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