Electrical breakdown of nanowires

Nano Letters

Volumn 11, Issue 11, 2011, Pages 4647-4651

  Zhao, Jiong ^a   Sun, Hongyu ^a   Dai, Sheng ^a   Wang, Yan ^a   Zhu, Jing ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AG NANOWIRES; BREAKDOWN MECHANISM; ELECTRICAL BREAKDOWN; IN-SITU TRANSMISSION; METALLIC NANOWIRES; SEMICONDUCTOR NANOWIRE; STRESS-INDUCED;

ELECTRIC BREAKDOWN OF LIQUIDS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; IN SITU PROCESSING; MATERIALS PROPERTIES; NANOWIRES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC WIRE;

NANOTUBE;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; HEAT; MATERIALS TESTING; RADIATION EXPOSURE; SEMICONDUCTOR;

ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; HOT TEMPERATURE; MATERIALS TESTING; NANOTUBES; SEMICONDUCTORS;

EID: 80755159173     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202160c     Document Type: Article

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