Ultrafast electronic delocalization in CdSe/CdS quantum rod heterostructures

Nano Letters

Volumn 11, Issue 11, 2011, Pages 4923-4931

  Smith, E Ryan ^a   Luther, Joseph M ^a   Johnson, Justin C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; BIEXPONENTIAL DECAY; CDS; CDSE/CDS; CONDUCTION BAND EDGE; CROSS-POLARIZED; DECAY RATE; DELOCALIZATIONS; ELECTRON DELOCALIZATION; ELECTRONIC DELOCALIZATION; FEMTOSECONDS; FINE STRUCTURES; IN-LINE; INTERFACIAL STRAIN; LENGTH DEPENDENCE; NANO-HETEROSTRUCTURES; PHOTOEXCITED ELECTRONS; POLARIZATION ANISOTROPY; SIZE-QUANTIZATION EFFECTS; TRANSIENT GRATING; ULTRA-FAST;

ANISOTROPY; ASPECT RATIO; CADMIUM ALLOYS; CADMIUM SULFIDE; CHARGE TRANSFER; CONDUCTION BANDS; CRYSTALS; DECAY (ORGANIC); ELECTRON MOBILITY; ION EXCHANGE;

CADMIUM COMPOUNDS;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; CADMIUM SULFIDE; QUANTUM DOT; SELENIUM DERIVATIVE; SULFIDE;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; MATERIALS TESTING;

CADMIUM COMPOUNDS; ELECTRON TRANSPORT; MATERIALS TESTING; QUANTUM DOTS; SELENIUM COMPOUNDS; SULFIDES;

EID: 80755159113     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202869z     Document Type: Article

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