Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

Journal of Materials Chemistry

Volumn 21, Issue 45, 2011, Pages 18256-18260

  Pei, Yanzhong ^a   Heinz, Nicholas A ^a   Snyder, G Jeffrey ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP SEMICONDUCTORS; HIGH MOBILITY; HIGH TEMPERATURE PHASE; LOW BAND GAP; LOW THERMAL CONDUCTIVITY; PBTE; SIMILAR MATERIAL; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES; THERMOELECTRICS;

SILVER; SILVER ALLOYS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT;

ENERGY GAP;

EID: 80755158975     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c1jm13888j     Document Type: Article

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