Effect of annealing temperature on growth of Ce-ZnO nanocomposite thin films: X-ray photoelectron spectroscopy study

Thin Solid Films

Volumn 520, Issue 2, 2011, Pages 721-725

  Yousefi, M ^a   Azimirad, R ^b   Amiri, M ^c   Moshfegh, A Z ^a  

^a SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

^b MALEK ASHTAR UNIVERSITY OF TECHNOLOGY   (Iran)

^c PAYAME NOOR UNIVERSITY   (Iran)

Author keywords

Ce doped ZnO; Nanocomposite; Sol gel; XPS analysis

Indexed keywords

AFM; ANNEALING TEMPERATURES; AVERAGE GRAIN SIZE; HEXAGONAL WURTZITE STRUCTURE; HIGHER TEMPERATURES; MAJOR METAL; NANOCOMPOSITE THIN FILMS; OPTIMUM VALUE; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES; XPS ANALYSIS; XPS DATA; XRD MEASUREMENTS; ZNO; ZNO THIN FILM;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DATA REDUCTION; GELS; METAL IONS; NANOCOMPOSITE FILMS; NANOCOMPOSITES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZINC SULFIDE;

CERIUM;

EID: 80755128205     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.06.081     Document Type: Conference Paper

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