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Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

(5) Hacohen Gourgy, S a Diamant, I a Almog, B a Dubi, Y a Deutscher, G a

a TEL AVIV UNIVERSITY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE STM; MEAN FIELD MODELS; OUT-OF-PLANE; PLANAR METAL; PLANAR TUNNEL JUNCTIONS; ROOM TEMPERATURE; SOFT MODES; SUBMICRON; TEMPERATURE DEPENDANCE; TUNNELING DENSITY OF STATE; TUNNELING MEASUREMENT; VIBRATIONAL EFFECTS;

GRAPHENE; MEAN FIELD THEORY;

TUNNEL JUNCTIONS;

EID: 80555145156 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3657146 Document Type: Article

Times cited : (3)

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