Field effect in chemical vapour deposited graphene incorporating a polymeric gate dielectric

Synthetic Metals

Volumn 161, Issue 21-22, 2011, Pages 2249-2252

  Tan, Y Y ^a   Tan, L W ^a   Jayawardena, K D G I ^a   Anguita, J V ^a   Carey, J D ^a   Silva, S R P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Chemical vapour deposition; Graphene; Polymeric gate; Transistor

Indexed keywords

CHANNEL LENGTH; CHEMICAL VAPOUR DEPOSITION; CHEMICAL VAPOURS; FIELD EFFECTS; GRAPHENE LAYERS; HIGH PURITY COPPER; HIGH QUALITY; INSULATING LAYERS; ORGANIC ELECTRONIC TRANSISTORS; OXIDE GATE DIELECTRICS; POLYMERIC GATE; RAMAN ANALYSIS; ROOM TEMPERATURE;

CARBON FILMS; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; HOLE MOBILITY; PHENOLS; POLYMERS; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80055085491     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2011.08.029     Document Type: Article

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