Ultrahigh throughput silicon nanomanufacturing by simultaneous reactive ion synthesis and etching

ACS Nano

Volumn 5, Issue 10, 2011, Pages 8002-8012

  Chen, Yi ^a   Xu, Zhida ^a   Gartia, Manas R ^a   Whitlock, Daren ^a   Lian, Yaguang ^a   Liu, G Logan ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

inward penetrated ion oxidation; nanomushroom; plasma assisted nucleation; simultaneous plasma enhanced reactive ion synthesis and etching (SPERISE); synchronized bottom up and top down nanomanufacturing

Indexed keywords

BOTTOM-UP AND TOP-DOWN; ION OXIDATION; NANO-MUSHROOM; PLASMA-ASSISTED NUCLEATION; REACTIVE ION;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; ENERGY CONVERSION; IONS; MANUFACTURE; NANORODS; NANOWIRES; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

REACTIVE ION ETCHING;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; INDUSTRY; LIGHT; METHODOLOGY; NANOTECHNOLOGY; POWER SUPPLY; REPRODUCIBILITY; SOLAR ENERGY; TIME;

CRYSTALLIZATION; ELECTRIC POWER SUPPLIES; INDUSTRY; LIGHT; NANOSTRUCTURES; NANOTECHNOLOGY; REPRODUCIBILITY OF RESULTS; SILICON; SOLAR ENERGY; TIME FACTORS;

EID: 80054999792     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2024754     Document Type: Article

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