Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3852-3862

  Koh, Shao Ming ^a,b   Kong, Eugene Yu Jin ^a   Liu, Bin ^a   Ng, Chee Mang ^b   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

Contact resistance; fin field effect transistor (FinFET); platinum silicide (PtSi); Schottky barrier; silicon carbon (Si:C); Tellurium (Te)

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DRIVE CURRENTS; FIN FIELD-EFFECT TRANSISTORS; FINFETS; N-CHANNEL; PARASITIC SERIES RESISTANCE; PLATINUM SILICIDE (PTSI); PT DEPOSITION; REDUCTION TECHNOLOGIES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SHORT-CHANNEL EFFECT; SILICON-CARBON (SI:C); TEMPERATURE INSTABILITY;

FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); INTEGRATED CIRCUITS; ION IMPLANTATION; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON; TELLURIUM; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80054884816     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2166077     Document Type: Article

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