Optoelectronic properties of Cu1-xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite for p-type transparent conducting oxide

Current Applied Physics

Volumn 12, Issue 1, 2012, Pages 166-170

  Ruttanapun, Chesta ^a   Prachamon, Wutthisak ^b   Wichainchai, Aree ^a  

^a KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG   (Thailand)

^b UBON RATCHATHANI UNIVERSITY   (Thailand)

Author keywords

Cu(1 x)Pt(x)FeO2 delafossite; Low electrical resistivity; Optical energy gap; p type semiconductor; Transparent conducting oxide (TCO)

Indexed keywords

DELAFOSSITES; ELECTRICAL RESISTIVITY; HIGH TEMPERATURE; LOW ELECTRICAL RESISTIVITY; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL ENERGY GAP; OPTOELECTRONIC PROPERTIES; P TYPE SEMICONDUCTOR; P-TYPE; ROOM TEMPERATURE; SEEBECK; SOLID STATE REACTION METHOD; TEMPERATURE RANGE; TRANSPARENT CONDUCTING OXIDE; VISIBLE LIGHT;

COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; HALL EFFECT; HOLE MOBILITY; IRON OXIDES; PLATINUM; SOLIDS;

OPTICAL PROPERTIES;

EID: 80054803199     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.05.028     Document Type: Article

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