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Current Applied Physics

Volumn 12, Issue 1, 2012, Pages 174-178

Understanding the junction degradation mechanism in CdS/CdTe solar cells using a Cd-deficient CdTe layer

(4) Ahn, Byung Tae a Yun, Jae Ho b Cha, Eun Seok a Park, Kyu Charn a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Korea Institute of Energy Research (KIER) (South Korea)

Author keywords

CdS; CdTe; CdTe solar cell; Degradation mechanism; Point defects

Indexed keywords

BACK CONTACT; BUILT-IN POTENTIAL; CD VACANCY; CDS; CDS/CDTE SOLAR CELLS; CDTE; CDTE CELLS; CDTE LAYERS; CDTE SOLAR CELLS; CU ATOMS; DEFECT ENERGY LEVEL; DEGRADATION MECHANISM; JUNCTION AREA; JUNCTION DEGRADATION; LIGHT PENETRATION; PL MEASUREMENTS; SOLAR ILLUMINATION; SPECTRAL QUANTUM EFFICIENCY;

CADMIUM ALLOYS; CADMIUM SULFIDE; CADMIUM SULFIDE SOLAR CELLS; DEFECTS; DEGRADATION; ELECTRON MOBILITY; POINT DEFECTS; VACANCIES;

CADMIUM COMPOUNDS;

EID: 80054799471 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2011.05.031 Document Type: Article

Times cited : (17)

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