Towards vertical coupling of CdTe/ZnTe quantum dots formed by a high temperature tellurium induced process

Journal of Crystal Growth

Volumn 335, Issue 1, 2011, Pages 28-30

  Wojnar, P ^a,b   Bougerol, C ^a   Bellet Amalric, E ^a   Besombes, L ^a   Mariette, H ^a   Boukari, H ^a  

^a CEA GRENOBLE   (France)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting IIVI materials

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; CDTE; CDTE/ZNTE; CRITICAL AMOUNT; DEPOSITION TIME; DIFFRACTION ANALYSIS; ELECTRON ENERGIES; HIGH TEMPERATURE; LOW DIMENSIONAL STRUCTURE; SEMICONDUCTING II-VI MATERIALS; SYSTEMATIC STUDY; TRANSMISSION ELECTRON MICROSCOPY IMAGES; VERTICAL COUPLING; VERTICAL STACKING;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DESORPTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING TELLURIUM; TELLURIUM; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80054756429     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.09.024     Document Type: Article

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