Electron transport properties of La-doped AgSbTe2 thermoelectric compounds

Electronic Materials Letters

Volumn 7, Issue 3, 2011, Pages 255-260

  Min, Bok Ki ^a   Kim, Bong Seo ^a   Kim, In Hye ^b   Lee, Jae Ki ^b   Kim, Myong Ho ^b   Oh, Min Wook ^a   Park, Su Dong ^a   Lee, Hee Woong ^a  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

^b Changwon National University   (South Korea)

Author keywords

AgSbTe2; Lanthanum; spark plasma sintering; transport properties

Indexed keywords

AGSBTE2; BRITTLE CLEAVAGE; DOPED SAMPLE; DOPING CONTENT; DOPING EFFECTS; ELECTRICAL RESISTIVITY; FRACTURED SURFACES; IRREGULAR MORPHOLOGY; LA DOPING; POWER FACTORS; SINGLE PHASE; SPARK PLASMA; TEMPERATURE REGIONS; THERMOELECTRIC COMPOUND;

BRITTLE FRACTURE; CARRIER CONCENTRATION; DUCTILE FRACTURE; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRIC SPARKS; ELECTRON TRANSPORT PROPERTIES; LANTHANUM ALLOYS; MORPHOLOGY; SILVER; SPARK PLASMA SINTERING; TRANSPORT PROPERTIES;

ANTIMONY COMPOUNDS;

EID: 80054097629     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-011-0914-0     Document Type: Article

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