Effect of ion irradiation on optoelectronic properties of Ba 0.12Sr0.88SO4: Eu phosphor

Physica B: Condensed Matter

Volumn 406, Issue 23, 2011, Pages 4483-4488

  Choubey, A ^a   Sharma, S K ^a   Lochab, S P ^b   Shripathi, T ^c  

^a INDIAN SCHOOL OF MINES   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

Diffuse reflectance; Irradiation effects; Photoluminescence; Thermoluminescence; X ray diffraction

Indexed keywords

ARGON ION; AVERAGE GRAIN SIZE; CHEMICAL COPRECIPITATION METHOD; DIFFUSE REFLECTANCE; DOSE RANGE; FLUENCES; FT-IR SPECTRUM; IRRADIATION EFFECTS; LUMINESCENCE PROPERTIES; NANOCRYSTALLINES; OPTIMUM CONCENTRATION; OPTOELECTRONIC PROPERTIES; ORTHORHOMBIC STRUCTURES; PHOTOLUMINESCENCE EMISSION; X-RAY DIFFRACTION STUDIES;

ARGON; BARIUM; EUROPIUM; EXCITED STATES; IRRADIATION; LIGHT EMISSION; PHOSPHORS; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); THERMOLUMINESCENCE; X RAY DIFFRACTION;

IONS;

EID: 80053576111     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.09.012     Document Type: Article

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