Thermoelectric properties and power generation characteristics of sintered undoped n-type Mg2Si

Thin Solid Films

Volumn 519, Issue 24, 2011, Pages 8528-8531

  Sakamoto, Tatsuya ^a   Iida, Tsutomu ^a   Fukushima, Naoki ^a   Honda, Yasuhiko ^a   Tada, Mitsuhiro ^a   Taguchi, Yutaka ^b   Mito, Yohiko ^c   Taguchi, Hirohisa ^a   Takanashi, Yoshifumi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b Union Material Inc   (Japan)

^c Showa KDE Co Ltd   (Japan)

Author keywords

Mg2Si; Power generation; Semiconductors; Sintering; Thermoelectrics

Indexed keywords

AGING TESTS; ATMOSPHERIC CONDITIONS; CROSS SECTIONAL AREA; DIMENSIONLESS FIGURE OF MERIT; FABRICATED DEVICE; MAXIMUM OUTPUT POWER; OPERATING TEMPERATURE; OUTPUT POWER; PLASMA ACTIVATED SINTERING; POLYCRYSTALLINE; ROOM TEMPERATURE; THERMOELECTRIC PROPERTIES; THERMOELECTRICS;

ATMOSPHERIC TEMPERATURE; SILICON; SINTERING; TESTING; THERMOELECTRIC EQUIPMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053563431     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.05.031     Document Type: Conference Paper

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