Patterned Electrode Vertical OFET: Analytical description, switching mechanisms and optimization rules

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8117, Issue , 2011, Pages

  Ben Sasson, Ariel J ^a   Tessler, Nir ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Numerical analysis; Organic FET; Vertical FET

Indexed keywords

ACTIVE LAYER; ANALYTICAL DESCRIPTION; CHANNEL LENGTH; CHARGE EXTRACTION; EXPERIMENTAL MEASUREMENTS; FUTURE CHALLENGES; GATE BIAS; NUMERICAL MODELS; OPERATIONAL BEHAVIOR; OPTIMIZATION RULES; ORGANIC FET; PATTERNED ELECTRODE; POTENTIAL BARRIERS; SCHOTTKY; SINGLE CARRIER; SINGLE LAYER; SPACE-CHARGE-LIMITED REGIMES; SUBTHRESHOLD SWING; SWITCHING MECHANISM; SWITCHING PROCESS; VERTICAL FET;

ELECTRIC PROPERTIES; MESFET DEVICES; NUMERICAL ANALYSIS; OHMIC CONTACTS; OPTIMIZATION; SCHOTTKY BARRIER DIODES; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80053518817     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.893455     Document Type: Conference Paper

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