Fabrication and analysis of epitaxially grown Ge1-xSn x microdisk resonator with 20-nm free-spectral range

IEEE Photonics Technology Letters

Volumn 23, Issue 20, 2011, Pages 1535-1537

  Cho, Seongjae ^a   Chen, Robert ^a   Koo, Sukmo ^b   Shambat, Gary ^a   Lin, Hai ^a   Park, Namkyoo ^b   Vuckǒvič, Jelena ^a   Kamins, Theodore I ^a   Park, Byung Gook ^a   Harris, James S ^a  

^a Stanford University   (United States)

^b Seoul National University   (South Korea)

Author keywords

Free spectral range (FSR); GeSn; infrared (IR); microdisk resonator; molecular beam epitaxy (MBE); whispering gallery mode (WGM)

Indexed keywords

FREE SPECTRAL RANGE; GESN; MICRODISK RESONATORS; MOLECULAR BEAM EPITAXY (MBE); WHISPERING GALLERY MODES;

EPITAXIAL GROWTH; FABRICATION; GERMANIUM; MOLECULAR BEAM EPITAXY; RESONATORS;

TIN;

EID: 80053510087     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2163929     Document Type: Article

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