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Applied Physics Letters

Volumn 99, Issue 12, 2011, Pages

Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface

(3) Upadhyay Kahaly, M a Nazir, S a Schwingenschlogl U a

a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE ENGINEERING; CONDUCTION BAND EDGE; ELECTRONIC BAND GAPS; ENERGY BAND; GAAS SUBSTRATES; GAAS THIN FILMS; GROWTH SEQUENCES; INSULATING STATE; METALLICITIES; WIDE-GAP MATERIALS;

ASTROPHYSICS; BAND STRUCTURE; CHARGE TRANSFER; DENSITY FUNCTIONAL THEORY; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; THIN FILMS; VACANCIES;

INTERFACES (MATERIALS);

EID: 80053425481 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3643049 Document Type: Article

Times cited : (10)

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