40Gbit/s transimpedance amplifier with high linearity range in 0.13m SiGe BiCMOS

Electronics Letters

Volumn 47, Issue 10, 2011, Pages 605-606

  Knochenhauer, C ^a   Sedighi, B ^b   Ellinger, F ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

40-GBIT/S; HIGH LINEARITY; INPUT CURRENT; SIGE BICMOS; TOTAL HARMONIC DISTORTIONS; TRANSIMPEDANCE AMPLIFIERS;

SEMICONDUCTING SILICON; SILICON ALLOYS;

DIFFERENTIAL AMPLIFIERS;

EID: 80053088418     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.0455     Document Type: Article

References (6)

1. 'Implementation Agreement for Integrated Dual Polarization Intradyne Coherent Receivers', Optical Internetworking Forum, IA OIF-DPC-RX-01.0, April 2010
2. max of 240/330GHz and gate delays below 3ps ', IEEE J. Solid-State Circuits, 2010, 45, p. 1678-1686 10.1109/JSSC.2010.2051475 0018-9200
3. Jun-De, J., and Hsu, S.S.H.: ' A 40-Gb/s transimpedance amplifier in 0.18-m CMOS technology ', IEEE J. Solid-State Circuits, 2008, 43, p. 1449-1457 10.1109/JSSC.2008.922735 0018-9200
4. Hauptmann, S., Schoeniger, D., Eickhoff, R., Ellinger, F., and Scheytt, C.: ' A 40Gbit/s transimpedance amplifier in 0.25m SiGe technology with ultra low power consumption ', MIKON 2008 - 17th Int. Conf. on Microwaves, Radar and Wireless Communications, Wroclaw, Poland, 2008
5. Weiner, J.S.: et al. ' SiGe differential transimpedance amplifier with 50-GHz bandwidth ', IEEE J. Solid-State Circuits, 2003, 38, p. 1512-1517 10.1109/JSSC.2003.815969 0018-9200
6. Knochenhauer, C., Hauptmann, S., Scheytt, J.C., and Ellinger, F.: ' A jitter-optimized differential 40-Gbit/s transimpedance amplifier in SiGe BiCMOS ', IEEE Trans. Microw. Theory Tech., 2010, 58, p. 2538-2548 10.1109/TMTT.2010. 2063792 0018-9480