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Volumn 8012, Issue , 2011, Pages
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Scale down of p-n junction diodes of an uncooled IR-FPA for improvement of the sensitivity and thermal time response by 0.13 μm CMOS technology
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Author keywords
CMOS; Diode; Focal plane array; Infrared; Scaling; SOI; Trade off; Uncooled
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Indexed keywords
CMOS;
FOCAL PLANE;
SCALING;
SOI;
TRADE-OFF;
UNCOOLED;
CELLS;
CMOS INTEGRATED CIRCUITS;
DIODES;
FOCUSING;
INFRARED RADIATION;
SEMICONDUCTOR JUNCTIONS;
TECHNOLOGY;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 80053003842
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.883342 Document Type: Conference Paper |
Times cited : (4)
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References (5)
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