Development of new SOI diode structure for beyond 17μm pixel pitch SOI diode uncooled IRFPAs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8012, Issue , 2011, Pages

  Takamuro, Daisuke ^a   Maegawa, Tomohiro ^a   Sugino, Takaki ^a   Kosasayama, Yasuhiro ^a   Ohnakado, Takahiro ^a   Hata, Hisatoshi ^a   Ueno, Masashi ^a   Fukumoto, Hiroshi ^a   Ishida, Kozo ^a   Katayama, Haruyoshi ^a,b   Imai, Tadashi ^a,b   Ueno, Munetaka ^a,b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Megapixel; SOI diode; Uncooled IRFPA

Indexed keywords

ACTIVE AREA; CONTACT HOLES; INFRARED RESPONSIVITY; MEGA-PIXEL; PIXEL PITCH; SERIES DIODE; SOI DIODE; TEST ELEMENTS; UNCOOLED; UNCOOLED INFRARED FOCAL PLANE ARRAYS; UNCOOLED IRFPA;

CHIP SCALE PACKAGES; DIFFUSION; DIODES; FOCAL PLANE ARRAYS; INFRARED RADIATION;

PIXELS;

EID: 80052972939     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.884556     Document Type: Conference Paper

References (11)

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