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Volumn 652, Issue 1, 2011, Pages 288-291

The role of hole mobility in scintillator proportionality

Author keywords

Carrier diffusion; CsI:Tl; HPGe; Mobility; Nonproportionality; Semiconductor scintillator

Indexed keywords

CARRIER DIFFUSIONS; CSI:TL; HPGE; NONPROPORTIONALITY; SEMICONDUCTOR SCINTILLATOR;

EID: 80052932229     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.07.074     Document Type: Conference Paper
Times cited : (31)

References (12)
  • 10
    • 80052941976 scopus 로고    scopus 로고
    • Semiconductor gamma radiation detectors: Band structure effects in energy resolution
    • S. Luryi, J.M. Xu, A. Zaslovsky (Eds.) Wiley Interscience, Hoboken, NJ, published online 18 August 2010
    • A. Subashiev, S. Luryi, Semiconductor gamma radiation detectors: band structure effects in energy resolution, in: S. Luryi, J.M. Xu, A. Zaslovsky (Eds.), Future Trends in Microelectronics: From Nanophotonics to Sensors to Energy, Wiley Interscience, Hoboken, NJ, published online 18 August 2010, doi: 10.1002/9780470649343.fmatter
    • Future Trends in Microelectronics: From Nanophotonics to Sensors to Energy
    • Subashiev, A.1    Luryi, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.