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Volumn 66, Issue 1, 2012, Pages 50-53
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Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties
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Author keywords
Chemical vapor deposition; Field emission properties; Grass like GaN; Semiconductors
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Indexed keywords
FIELD EMISSION PROPERTIES;
FIELD EMISSION PROPERTY;
GAN NANOSTRUCTURES;
GRASS-LIKE GAN;
HORIZONTAL TUBE FURNACES;
NEAR BAND EDGE EMISSIONS;
POTENTIAL APPLICATIONS;
ROOM-TEMPERATURE PHOTOLUMINESCENCE;
SILICON SUBSTRATES;
SINGLE-CRYSTALLINE;
THRESHOLD FIELDS;
TURN-ON FIELD;
VACUUM MICROELECTRONIC DEVICES;
XRD;
CHEMICAL VAPOR DEPOSITION;
CHEMICALS REMOVAL (WATER TREATMENT);
GALLIUM ALLOYS;
GALLIUM NITRIDE;
MICROELECTRONICS;
NANOSTRUCTURES;
VACUUM APPLICATIONS;
FIELD EMISSION DISPLAYS;
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EID: 80052845235
PISSN: 0167577X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matlet.2011.08.049 Document Type: Article |
Times cited : (30)
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References (14)
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