Wafer-scale broadband antireflective silicon fabricated by metal-assisted chemical etching using spin-coating Ag ink

Optics Express

Volumn 19, Issue 105, 2011, Pages A1109-A1116

  Yeo, Chan Il ^a   Min Song, Young ^a   Jang, Sung Jun ^a   Tak Lee, Yong ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COATINGS; ETCHING; FABRICATION; LITHOGRAPHY; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SILVER; SINTERING; INK;

ANTI-REFLECTION; ANTIREFLECTIVE; DEVICE APPLICATION; ETCHING TIME; INCIDENT ANGLES; LITHOGRAPHY PROCESS; MASS PRODUCTION; METAL-ASSISTED CHEMICAL ETCHING; NANO-FABRICATION METHODS; SINTERING TEMPERATURES; SOLAR-CELL APPLICATIONS; SUB-WAVELENGTH STRUCTURES; SURFACE REFLECTIONS; SURFACE UNIFORMITY; WAFER-SCALE; WAVELENGTH RANGES;

SILICON WAFERS;

EID: 80052745603     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.0A1109     Document Type: Article

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