Strain-engineering for high-performance STT-MRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 212-213

  Iba, Y ^a   Tsunoda, K ^a   Lee, Y M ^a   Yoshida, C ^a   Noshiro, H ^a   Takahashi, A ^a   Yamazaki, Y ^a   Nakabayashi, M ^a   Hatada, A ^a   Aoki, M ^a   Sugii, T ^a  

^a Low power Electronics Association and Project LEAP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FREE LAYERS; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE RANDOM ACCESS MEMORY; MAGNETOSTRICTIVE EFFECT; SPIN TRANSFER TORQUE; SWITCHING CURRENTS;

ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC STORAGE; RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS;

MRAM DEVICES;

EID: 80052687993     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

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3. J. C. Slonczewski, J. Magn. Magn. Mater. 159 L1 (1996)