Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 148-149

  Miki, H ^a   Yamaoka, M ^a   Tega, N ^a   Ren, Z ^b   Kobayashi, M ^b   D'Emic, C P ^b   Zhu, Y ^b   Frank, D J ^b   Guillorn, M A ^b   Park, D G ^b   Haensch, W ^b   Torii, K ^c  

^a HITACHI AMERICA LTD   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGES; METAL-GATE; RECOVERY EFFECTS; SCALED DEVICES; STATISTICAL VARIATIONS;

METAL RECOVERY;

INTEGRATED CIRCUITS;

EID: 80052686055     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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5. L Rabiner, Proc. IEEE, 257 (1989)
6. H Miki et al, 2010 IEDM p 620
7. S Realov et al, 2010 IEDM, p 624
8. B Kaczer et al, 2010 IRPS, p 26