Impact of back bias on ultra-thin body and BOX (UTBB) devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 160-161

  Liu, Q ^a   Monsieur, F ^a   Kumar, A ^b   Yamamoto, T ^c   Yagishita, A ^d   Kulkarni, P ^b   Ponoth, S ^b   Loubet, N ^a   Cheng, K ^b   Khakifirooz, A ^b   Haran, B ^b   Vinet, M ^c   Cai, J ^f   Kuss, J ^b   Linder, B ^f   Grenouillet, L ^c   Mehta, S ^b   Khare, P ^a   Berliner, N ^b   Levin, T ^b   Kanakasabapathy, S ^b   Upham, A ^b   Sreenivasan, R ^b   Le Tiec, Y ^c   Posseme, N ^c   Li, J ^b   Demarest, J ^b   Smalley, M ^b   Leobandung, E ^b   Monfray, S ^g   Boeuf, F ^g   Skotnicki, T ^g   Ishimaru, K ^d   Takayanagi, M ^d   Kleemeier, W ^a   Bu, H ^b   Luning, S ^e   Hook, T ^b   Khare, M ^b   Shahidi, G ^f   Doris, B ^b   Sampson, R ^a   more..

^a STMICROELECTRONICS   (Italy)

^b IBM   (United States)

^c State University of New York   (United States)

^d TOSHIBA CORPORATION   (Japan)

^e IBM MICROELECTRONICS   (United States)

^f IBM T J WATSON RESEARCH CENTER   (United States)

^g STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACK BIAS; BIAS POINTS; CONTACTED GATE PITCH; GATE LENGTH; NEGATIVE BIAS; RING OSCILLATOR; SHORT-CHANNEL EFFECT; SRAM STATIC NOISE MARGIN; TEMPERATURE RANGE; ULTRATHIN BODY;

FIELD EFFECT TRANSISTORS;

EID: 80052680200     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K. Cheng, et al, IEDM, p49, 2009.
2. C. Fenouillet-Beranger, et al, IEDM, p667, 2009.
3. Q. Liu et al, Symp. VLSI Tech., p61, 2010.
4. O. Weber, et al, IEDM, p58, 2010.
5. O. Faynot, et al, IEDM, p50, 2010.
6. T. Ishigaki, et al, IRPS, p1049, 2010.