A 512Mb phase-change memory (PCM) in 90nm CMOS achieving 2b/cell

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2011, Pages 202-203

  Close, G F ^a   Frey, U ^a,d   Morrish, J ^b   Jordan, R ^b   Lewis, S ^b   Maffitt, T ^b   Breitwisch, M ^c   Hagleitner, C ^a   Lam, C ^c   Eleftheriou, E ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; CELL RESISTANCE; CIRCUIT BLOCKS; CLOSED-LOOP; KEY FEATURE; MEMORY CHIPS; NON-VOLATILE; ON CHIPS; PHASE CHANGES; PROGRAMMING PULSE;

ELECTRIC POTENTIAL; PHASE CHANGE MEMORY; VOLTAGE REGULATORS;

VLSI CIRCUITS;

EID: 80052667337     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)