Control of the π plasmon in a single layer graphene by charge doping

Applied Physics Letters

Volumn 99, Issue 8, 2011, Pages

  Shin, S Y ^a   Kim, N D ^a   Kim, J G ^a   Kim, K S ^b   Noh, D Y ^c   Kim, Kwang S ^a   Chung, J W ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Sejong University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DOPING; HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; K-DOPING; LOW ENERGIES; PLASMON ENERGY; PLASMON EXCITATIONS; PLASMONIC; PLASMONICS; SINGLE LAYER; UNIVERSAL CURVE;

ELECTRON ENERGY LOSS SPECTROSCOPY; GRAPHENE; POTASSIUM;

PLASMONS;

EID: 80052400757     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3630230     Document Type: Article

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