A Fortran program for calculating electron or hole mobility in disordered semiconductors from first-principles

Computer Physics Communications

Volumn 182, Issue 12, 2011, Pages 2632-2637

  Li, Zi ^a   Zhang, Xu ^a   Lu, Gang ^a  

^a CALIFORNIA STATE UNIVERSITY   (United States)

Author keywords

Carrier mobility; Disordered semiconductors; First principles

Indexed keywords

AB INITIO MOLECULAR DYNAMICS; CARRIER STATE ENERGY; CATALOGUE IDENTIFIERS; DISORDERED SEMICONDUCTORS; DISTRIBUTED PROGRAM; FIRST-PRINCIPLES; FORTRAN 90; FORTRAN PROGRAMS; HOPPING MECHANISM; IRELAND; MASTER EQUATIONS; NON-ADIABATIC; POLY (3-HEXYLTHIOPHENE); PROGRAMMING LANGUAGE; RATIONAL DESIGN; RUNNING TIME; SOLUTION METHODS; STATIC DISORDER; SYSTEM SIZE; TEST DATA; TRANSITION RATES;

CARRIER CONCENTRATION; COMPUTER ARCHITECTURE; COMPUTER SYSTEMS PROGRAMMING; CONJUGATED POLYMERS; DISTRIBUTED COMPUTER SYSTEMS; ELECTRIC FIELDS; EQUATIONS OF STATE; FORTRAN (PROGRAMMING LANGUAGE); HOLE MOBILITY; MOLECULAR DYNAMICS; SOFTWARE TESTING; WINDOWS OPERATING SYSTEM;

PROGRAM COMPILERS;

EID: 80052321422     PISSN: 00104655     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cpc.2011.07.016     Document Type: Article

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