Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer

Optics Express

Volumn 19, Issue 18, 2011, Pages 16975-16984

  Tseng, Ming Lun ^a   Chen, Bo Han ^a   Chu, Cheng Hung ^a   Chang, Chia Min ^a   Lin, Wei Chih ^a   Chu, Nien Nan ^b   Mansuripur, Masud ^c   Liu, Ai Qun ^d   Tsai, Din Ping ^a,b,e  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^c UNIVERSITY OF ARIZONA   (United States)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GERMANIUM; ULTRAFAST LASERS; ULTRASHORT PULSES;

GE2SB2TE5 FILMS; LASER FLUENCES; LASER INDUCED FORWARD TRANSFER; MULTI-LEVEL; OPTICAL REFLECTION; PHASE CHANGES; PHASE STATE;

PHASE CHANGE MEMORY;

EID: 80052203824     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.016975     Document Type: Article

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