Theoretical investigation on interfacial-potential-limited diffusion and recombination in dye-sensitized solar cells

Journal of Physical Chemistry C

Volumn 115, Issue 34, 2011, Pages 17154-17162

  Cai, Jinhua ^a,b,c   Han, Liyuan ^a,b,c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY E; CONDUCTION BAND EDGE; DE-TRAPPING; DYE-SENSITIZED SOLAR CELL; ELECTRON DENSITY DEPENDENCE; ELECTRON DIFFUSION; ENERGY LEVEL; EXCESS ELECTRONS; INTERFACE LAYER; INTERFACIAL POTENTIAL; LINEAR DEPENDENCE; LINEAR REGION; LOCAL ELECTRIC FIELD; NONLINEAR REGIONS; NORMAL CONDITION; OPERATING MECHANISM; POTENTIAL BARRIERS; RECOMBINATION RATE; RELATIVE DIELECTRIC CONSTANT; SIZE DEPENDENCE; SIZE EFFECTS; TEMPERATURE RANGE; THEORETICAL INVESTIGATIONS;

ACTIVATION ENERGY; CARRIER CONCENTRATION; CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY; DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; ELECTRON DENSITY MEASUREMENT; ELECTRON MOBILITY; ELECTRONS; FERMI LEVEL; NUCLEAR PHYSICS; PHOTOELECTROCHEMICAL CELLS; SOLAR CELLS;

DIFFUSION BARRIERS;

EID: 80052164094     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp203886y     Document Type: Article

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