A high-sensitive ultra-thin MEMS capacitive pressure sensor

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Volumn , Issue , 2011, Pages 112-115

  Zhang, Y ^a   Howver, R ^a   Gogoi, B ^a,b   Yazdi, N ^a  

^a Evigia Systems Inc   (United States)

^b HVVi Semiconductors Inc   (United States)

Author keywords

Capacitive pressure sensor; EMI resistance; high sensitivity; immune to media; large dynamic range; MEMS; Ultra thin

Indexed keywords

CAPACITIVE PRESSURE SENSORS; EMI RESISTANCE; HIGH SENSITIVITY; IMMUNE TO MEDIA; LARGE DYNAMIC RANGE; ULTRA-THIN;

ACTUATORS; CAPACITORS; ELECTROMAGNETIC PULSE; MICROSYSTEMS; PARTIAL PRESSURE SENSORS; SOLID-STATE SENSORS;

PRESSURE SENSORS;

EID: 80052128504     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TRANSDUCERS.2011.5969151     Document Type: Conference Paper

References (5)

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2. Y. Zhang and K. D. Wise, "A Barometric Pressure Sensor with Multiple Elements," Digest IEEE Transducers '95 Stockholm, Sweden, June 1995.
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4. C. Hierold, B. Clasbrummel. "Low power integrated pressure sensor system for medical applications," Sensors and Actuators (Part A) Physical, no. 73, 1999, pp. 68-67
5. Bishnu P. Gogoi and David J. Monk, "Method of manufacturing a semiconductor component having a fixed electrode between two flexible diaphragms," U.S. Patent #6,426,239 B1, issued July 30, 2002.