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Volumn 519, Issue 22, 2011, Pages 7987-7991
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Fluctuation-induced tunneling dominated electrical transport in multi-layered single-walled carbon nanotube films
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Author keywords
Atomic force microscopy; Bolometer; Single walled carbon nanotubes; Temperature coefficient; Thin films; Tunneling
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Indexed keywords
ELECTRICAL TRANSPORT;
LAYER BY LAYER;
LAYER NUMBER;
LOW TEMPERATURES;
LOW-TEMPERATURE MEASUREMENTS;
MULTI-LAYERED;
NITRIC ACID TREATMENT;
PHOTOELECTRIC PROPERTY;
RESEARCH EFFORTS;
SINGLE-WALLED CARBON;
SPACE BETWEEN;
TEMPERATURE COEFFICIENT;
TEMPERATURE COEFFICIENT OF RESISTANCE;
TEMPERATURE RANGE;
THERMAL-ANNEALING;
TRANSPORT MECHANISM;
TUNNELING BARRIER;
TUNNELING MODELS;
VACUUM FILTRATION;
ATOMIC FORCE MICROSCOPY;
CARBON FILMS;
DEPOSITION;
ELECTRIC PROPERTIES;
NITRIC ACID;
TEMPERATURE MEASUREMENT;
SINGLE-WALLED CARBON NANOTUBES (SWCN);
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EID: 80052126554
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.05.059 Document Type: Article |
Times cited : (10)
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References (22)
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