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Volumn 519, Issue 22, 2011, Pages 7987-7991

Fluctuation-induced tunneling dominated electrical transport in multi-layered single-walled carbon nanotube films

Author keywords

Atomic force microscopy; Bolometer; Single walled carbon nanotubes; Temperature coefficient; Thin films; Tunneling

Indexed keywords

ELECTRICAL TRANSPORT; LAYER BY LAYER; LAYER NUMBER; LOW TEMPERATURES; LOW-TEMPERATURE MEASUREMENTS; MULTI-LAYERED; NITRIC ACID TREATMENT; PHOTOELECTRIC PROPERTY; RESEARCH EFFORTS; SINGLE-WALLED CARBON; SPACE BETWEEN; TEMPERATURE COEFFICIENT; TEMPERATURE COEFFICIENT OF RESISTANCE; TEMPERATURE RANGE; THERMAL-ANNEALING; TRANSPORT MECHANISM; TUNNELING BARRIER; TUNNELING MODELS; VACUUM FILTRATION;

EID: 80052126554     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.05.059     Document Type: Article
Times cited : (10)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.