Impact of the vertical layer structure on the emission directionality of thin-film InGaN photonic crystal LEDs

2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Volumn , Issue , 2011, Pages

  Rangel, Elizabeth ^a   Matioli, Elison ^a   Chen, Hung Tse ^a   Weisbuch, Claude ^a   Speck, James S ^a   Hu, Evelyn L ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY THICKNESS; EMISSION DIRECTIONALITY; ETCH DEPTH; EXTRACTION EFFICIENCIES; LAYER STRUCTURES; QUANTUM WELL;

CRYSTALLOGRAPHY; EXTRACTION; GALLIUM COMPOUNDS; LIGHT EMITTING DIODES; OPTICS; PHOTONIC CRYSTALS; QUANTUM WELL LASERS;

CRYSTAL STRUCTURE;

EID: 80052122008     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. J. J. Wierer, A. David, and M. M. Megens, "III-nitride photonic-crystal light-emitting diodes with high extraction efficiency," Nat. Photonics 3, 163 (2009).
2. E. Rangel, E. Matioli, H.-T. Chen, Y.-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes," Appl. Phys. Lett. 97, 061118 (2010).