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Volumn , Issue , 2011, Pages

Cu damascene interconnects with an organic low-k fluorocarbon dielectric deposited by microwave excited plasma enhanced CVD

Author keywords

[No Author keywords available]

Indexed keywords

BLANKET FILMS; CU DAMASCENE; CU DAMASCENE INTERCONNECTS; DAMASCENE PROCESS; DRY ETCH PROCESS; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTIC; FLUOROCARBON FILMS; LOW K DIELECTRICS; NITROGEN PLASMA TREATMENT; ORGANIC LOW-K; STRESS TEST;

EID: 80052039432     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940345     Document Type: Conference Paper
Times cited : (1)

References (8)
  • 1
    • 80052069701 scopus 로고    scopus 로고
    • International technology roadmap for semiconductors (ITRS2009
    • International technology roadmap for semiconductors (ITRS2009)
  • 5
    • 0242526757 scopus 로고    scopus 로고
    • A calculation of diffusion parameters for Cu/Ta and Ta/Si interfaces in Cu/Ta/Si (111) structure
    • A.Z. Mosfegh, O. Akhavan "A calculation of diffusion parameters for Cu/Ta and Ta/Si interfaces in Cu/Ta/Si (111) structure" Materials Science in Semiconductor Processing, 2003
    • (2003) Materials Science in Semiconductor Processing
    • Mosfegh, A.Z.1    Akhavan, O.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.