Fabrication of 150-nm T-gate metamorphic Alinas/GaInAs HEMTs on GaAs substrates by MOCVD

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1224-1226

  Li, Haiou ^a,b   Feng, Zhihong ^c   Tang, Chak Wah ^a   Lau, Kei May ^a  

^a GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

Author keywords

AlInAs GaInAs; GaAs; metal organic chemical vapor deposition (MOCVD); metamorphic high electron mobility transistors (mHEMTs)

Indexed keywords

ALINAS/GAINAS; CURRENT GAIN CUTOFF FREQUENCY; DEVICE PERFORMANCE; FEEDBACK CAPACITANCE; GAAS; GAAS SUBSTRATES; GATE DRAIN; GATE LENGTH; INPUT CAPACITANCE; MAXIMUM OSCILLATION FREQUENCY; MAXIMUM TRANSCONDUCTANCE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); NONALLOYED OHMIC CONTACT; PHOTOLITHOGRAPHY TECHNOLOGY; RF PERFORMANCE; SUBMICROMETERS;

CAPACITANCE; CUTOFF FREQUENCY; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; ORGANIC CHEMICALS; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80052028782     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2159824     Document Type: Article

References (11)

1. Y. Yamashita, A. Endoh, K. Shinohara, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, "Pseudomorphic In0.52Al0.48As/In0.7Ga0.3 as HEMTs with an ultrahigh fT of 562 GHz," IEEE Electron Device Lett., vol. 23, no. 10, pp. 573-575, Oct. 2002.
2. W. E. Hoke, T. D. Kennedy, A. Torabi, C. S. Whelan, P. F. Marsh, R. E. Leoni, C. Xu, and K. C. Hsieh, "High indium metamorphic HEMT on a GaAs substrate," J. Cryst. Growth, vol. 251, no. 1-4, pp. 827-831, Apr. 2003.
3. M.Washima, T. Tanaka, and T. Hashimoto, "MOVPE grown metamorphic HEMT epitaxial wafers," Hitachi Cable Rev., no. 20, pp. 39-44, 2001.
4. W.-C. Hsu, D.-H. Huang, Y.-S. Lin, Y.-J. Chen, J.-C. Huang, and C.-L. Wu, "Performance improvement in tensile-strained In0.5Al0.5As/InxGa1xAs/In0. 5Al0.5As metamorphic HEMT," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 406-412, Mar. 2006.
5. H. O. Li, C. W. Tang, K. J. Chen, and K. M. Lau, "Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment," in Proc. CS Mantech Conf., May 2007, pp. 313-315.
6. H. O. Li, C. W. Tang, K. J. Chen, and K. M. Lau, "Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates grown by MOCVD," IEEE Electron Device Lett., vol. 29, no. 6, pp. 561-564, Jun. 2008.
7. Y. C. Lien, E. Y. Chang, H. C. Chang, L. H. Chu, G. W. Huang, H. M. Lee, C. S. Lee, S. H. Chen, P. T. Shen, and C. Y. Chang, "Lownoise metamorphic HEMTs with reflowed 0.1-μm T-gate," IEEE Electron Device Lett., vol. 25, no. 6, pp. 348-350, Jun. 2004.
8. B.-H. Lee, D. An, M.-K. Lee, B.-O. Lim, S.-D. Kim, and J.-K. Rhee, "Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology," IEEE Electron Device Lett., vol. 25, no. 12, pp. 766-768, Dec. 2004.
9. H. S. Yoon, J. H. Lee, J. Y. Shim, J. Y. Hong, D. M. Kang, W. J. Chang, H. C. Kim, and K. I. Cho, "0.15 μm gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics, " in Proc. 16th Int. Conf. Indium Phosphide Relat. Mater., May 2003, pp. 114-117.
10. S. Kim and I. Adesida, "0.15-μm-gate InAlAs/InGaAs/InP E-HEMTs utilizing Ir/Ti/Pt/Au gate structure," IEEE Electron Device Lett., vol. 27, no. 11, pp. 873-876, Nov. 2006.
11. S.-W. Kim, K.-M. Lee, J.-H. Lee, and K.-S. Seo, "High-performance 0.1-μm In0 .4AlAs/In0.35GaAs MHEMTs with Ar plasma treatment," IEEE Electron Device Lett., vol. 26, no. 11, pp. 787-789, Nov. 2005.