Raman and optical spectroscopy characteristics of Se-doped Bi 12SiO20 crystals

Optical Materials

Volumn 33, Issue 11, 2011, Pages 1573-1577

  Milenov, T I ^a,b   Rafailov, P M ^a   Thomsen, C ^c   Egorysheva, A ^d   Titorenkova, R ^e   Kostova, B ^f   Skorikov, V ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b European Polytechnic University   (Bulgaria)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Russian Federation)

^e INSTITUTE OF MINERALOGY AND CRYSTALLOGRAPHY   (Bulgaria)

^f NEW BULGARIAN UNIVERSITY   (Bulgaria)

Author keywords

Crystal growth; Doping; IR and optical spectroscopy; Raman

Indexed keywords

ABSORPTION SPECTROSCOPY; BISMUTH COMPOUNDS; CHEMICAL ANALYSIS; CHROMIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTAL SYMMETRY; DOPING (ADDITIVES); IRON COMPOUNDS; RAMAN SCATTERING; SILICON COMPOUNDS;

ABSORPTION CO-EFFICIENT; LATTICE DISTORTIONS; LOW CONCENTRATIONS; OPTICAL SPECTROSCOPY; POLARIZED RAMAN SPECTRA; RAMAN; SECOND PHASE INCLUSIONS; TETRAHEDRAL POSITION;

SELENIUM COMPOUNDS;

EID: 80052026647     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2011.04.001     Document Type: Article

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