Dielectric enhancement of BaTiO3/BaSrTiO3/SrTiO 3 multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method

Materials Letters

Volumn 65, Issue 23-24, 2011, Pages 3574-3576

  Zhao, Ning ^a   Wan, Lixi ^a   Cao, Liqiang ^a   Yu, Daquan ^a   Yu, Shuhui ^b   Sun, Rong ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY   (China)

Author keywords

Dielectric property; Embedded capacitor; Multilayer; Sol gel preparation; Thin films

Indexed keywords

BARIUM COMPOUNDS; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIELECTRIC PROPERTIES OF SOLIDS; FILM CAPACITOR; MULTILAYER FILMS; MULTILAYERS; PEROVSKITE SOLAR CELLS; PLATINUM; SOL-GEL PROCESS; SOL-GELS; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS;

DIELECTRIC ENHANCEMENT; DIELECTRIC LAYER; EMBEDDED CAPACITOR; MULTI-LAYER THIN FILM; PACKAGE SUBSTRATES; PEROVSKITE STRUCTURES; SOL GEL PREPARATIONS; STACKING PERIODICITY;

FILM PREPARATION;

EID: 80052023995     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2011.08.004     Document Type: Article

References (21)

1. Kamalasanan MN, Chanra S, Joshi PC, Mansingh A. Appl Phys Lett 1991;59:3547-9.
2. Polla DL, Francis LF. Annu Rev Mater Sci 1998;28:563-97.
3. Wang J, Zhang TJ, Xiang JH, Zhang BS. Mater Chem Phys 2008;108:445-8.
4. Biharj B, Kumar J, Stauf GT, Van Buskirk PC, Hwang CS. J Appl Phys 1994;76:1169-74.
5. Hu ZG, Wang GS, Huang ZM, Chu JH. J Phys Chem Solids 2003;64:2445-50.
6. Choi DH, Lee DS, Sim HJ, Chang M, Hwang HS. Appl Phys Lett 2006;88:082904.
7. Watanabe Y, Bednorz JG, Bietsch A, Gerber Ch, Widmer D, Beck A, et al. Appl Phys Lett 2001;78:3738-40.
8. Wei ZQ, Xu HP, Noda M, Okuyama M. J Cryst Growth 2002;237-239:443-7.
9. Gim Y, Hudson T, Fan Y, Kwon C, Findikoglu AT, Gibbons BJ, et al. Appl Phys Lett 2000;77:1200-2.
10. Jain M, Majumder SB, Katiyar RS, Bhalla AS. Mater Lett 2003;57:4232-6.
11. Tabata H, Tanaka H, Kawai T. Appl Phys Lett 1994;65:1970-2.
12. O'Neill D, Bowman RM, Gregg JM. Appl Phys Lett 2000;77:1520-2.
13. Hu DZ, Shen MR, Cao WW. Microelectron Eng 2006;83:553-6.
14. Shimuta T, Nakagawara O, Makino T, Arai S, Tabata H, Kawai T. J Appl Phys 2002;91:2290-4.
15. Kim J, Kim Y, Kim YS, Lee J, Kim L, Jung D. Appl Phys Lett 2002;80:3581-3.
16. Shen MR, Ge SB, Cao WW. J Phys D: Appl Phys 2001;34:2935-8.
17. Xu R, Shen MR, Ge SB, Gan ZQ, Cao WW. Thin Solid Films 2002;406:113-7.
18. Qu BD, Evstigneev M, Johnson DJ, Prince RH. Appl Phys Lett 1998;72:1394-6.
19. Sharma HB, Sarma HNK, Mansingh A. J Mater Sci 1999;34:1385-90.
20. Wang J, Xiang JH, Bai LY, Liu TZ, Yang GL, Zhang TJ. Mater Chem Phys 2008;112:542-5.
21. Nakagawara O, Shimuta T, Makino T, Arai S, Tabata H, Kawai T. Appl Phys Lett 2000;77:3257-9.