Numerical evaluation and characterization of single junction solar cell based on thin-film a-Si:H/a-SiGe:H hetero-structure

2011 19th Iranian Conference on Electrical Engineering, ICEE 2011

Volumn , Issue , 2011, Pages

  Kosarian, Abdolnabi ^a   Jelodarian, Peyman ^a  

^a SHAHID CHAMRAN UNIVERSITY OF AHVAZ   (Iran)

Author keywords

a Si a SiGe; Amorphous silicon; Amorphous silicon solar cell simulation; Amorphous solar cell; Silicon Germanium

Indexed keywords

A-SI/A-SIGE; A-SI:H; ABSORBER LAYERS; AMORPHOUS SILICON SOLAR CELL SIMULATION; AMORPHOUS THIN FILMS; BAND GAPS; DOPING CONCENTRATION; GE ATOM; GE CONTENT; I-LAYER; KEY PARAMETERS; MAXIMUM EFFICIENCY; MULTIJUNCTION; NUMERICAL EVALUATIONS; P-LAYER; SI-BASED SOLAR CELLS; SILICON GERMANIUM; SINGLE JUNCTION; SINGLE JUNCTION SOLAR CELLS; THIN FILM SOLAR CELLS;

AMORPHOUS FILMS; AMORPHOUS SILICON; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRICAL ENGINEERING; FILM THICKNESS; GERMANIUM; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR DOPING; SILICON; SILICON ALLOYS; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80051924299     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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