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Journal of Alloys and Compounds

Volumn 509, Issue 38, 2011, Pages 9296-9301

Thermoelectric properties of Bi2SexTe3-x prepared by Bridgman method

(4) Keawprak, N a Lao Ubol, S a Eamchotchawalit, C a Sun, Z M b

a THAILAND INSTITUTE OF SCIENTIFIC AND TECHNOLOGICAL RESEARCH (Thailand)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Bi2SexTe 3 x; Bridgman method; Thermal conductivity; Thermoelectric property

Indexed keywords

DIMENSIONLESS FIGURE OF MERIT; ELECTRICAL CONDUCTIVITY; ELECTRONIC PARTS; HIGH ELECTRICAL CONDUCTIVITY; LOW THERMAL CONDUCTIVITY; P-TYPE; POSITIVE VALUE; ROOM TEMPERATURE; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; HOLE CONCENTRATION; THERMOELECTRIC EQUIPMENT;

THERMAL CONDUCTIVITY;

EID: 80051903311 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.06.116 Document Type: Article

Times cited : (19)

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