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Solid State Communications

Volumn 151, Issue 19, 2011, Pages 1377-1381

Schottky-type grain boundaries in CCTO ceramics

(3) Felix, A A a Orlandi, M O a Varela, J A a

a SÃO PAULO STATE UNIVERSITY UNESP (Brazil)

Author keywords

A. CCTO; C. Grain boundary; D. Potential barrier; D. Schottky model

Indexed keywords

A. CCTO; AC MEASUREMENTS; BARRIER WIDTHS; C. GRAIN BOUNDARY; DC ELECTRICAL; HIGH FREQUENCY; LOW FREQUENCY; POLYCRYSTALLINE SAMPLES; POOLE-FRENKEL MODEL; POTENTIAL BARRIERS; SCHOTTKY; SCHOTTKY BARRIERS; SEMICONDUCTOR THEORY; SINGLE PHASE; SOLID STATE REACTION METHOD; TEMPERATURE INCREASE; X-RAY DIFFRACTOGRAMS;

CERAMIC MATERIALS; ELECTRIC FIELDS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLID STATE REACTIONS;

ELECTRIC VARIABLES MEASUREMENT;

EID: 80051799532 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2011.06.012 Document Type: Article

Times cited : (85)

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