Study of Sm-doped ZnO samples sintered in a nitrogen atmosphere and deposited on n-Si(1 0 0) by evaporation technique

Journal of Magnetism and Magnetic Materials

Volumn 323, Issue 24, 2011, Pages 3239-3245

  Murtaza Rai, G ^a   Iqbal, M A ^a   Xu, Y B ^b   Will, I G ^b   Huang, Z C ^b  

^a UNIVERSITY OF THE PUNJAB   (Pakistan)

^b UNIVERSITY OF YORK   (United Kingdom)

Author keywords

Electrical properties; Ferromagnetic behavior; Nitrogen sintering; SEM analysis; XRD

Indexed keywords

CERAMIC TARGET; CRYSTALLOGRAPHIC ORIENTATIONS; DOPING CONCENTRATION; DOPING CONTENT; FERROMAGNETIC BEHAVIORS; HALL EFFECT MEASUREMENT; HEXAGONAL SHAPES; INTRINSIC PROPERTY; NITROGEN ATMOSPHERES; NITROGEN INCORPORATION; P-TYPE CONDUCTIVITY; POLYCRYSTALLINE THIN FILM; ROOM TEMPERATURE; SAMARIUM DOPING; SCANNING ELECTRONS; SEM ANALYSIS; SOLID STATE REACTION METHOD; THERMAL EVAPORATION TECHNIQUE; WURTZITE CRYSTAL STRUCTURE; XRD; ZNO;

CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HALL EFFECT; NITROGEN; OXIDE FILMS; PARAMAGNETISM; PHASE TRANSITIONS; SAMARIUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SINTERING; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE; ZINC SULFIDE;

THERMAL EVAPORATION;

EID: 80051788551     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2011.07.021     Document Type: Article

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